发明名称 |
Manufacture of semiconductor device with field oxide |
摘要 |
A method of manufacturing a semiconductor device capable of isolating fine pattern elements by using LOCOS. The method includes the steps of: (a) forming a relatively thick first nitride film pattern on the surface of a semiconductor substrate having an oxide film; (b) wet-etching the oxide film by using the first nitride film as a mask; (c) filling the under-etch region of the first nitride film with nitride and forming a second nitride film thinner than the first nitride film on the exposed surface of the semiconductor substrate; (d) thermally oxidizing all the exposed second nitride film in a dry oxygen atmosphere to form an oxide film on the surface of the semiconductor substrate at least at the region not covered with tile first nitride film; and (e) forming a thermal oxide film on the semiconductor substrate not covered with the first nitride film at a temperature lower than the oxidation temperature at the step (d).
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申请公布号 |
US5453397(A) |
申请公布日期 |
1995.09.26 |
申请号 |
US19940304477 |
申请日期 |
1994.09.12 |
申请人 |
FUJITSU LIMITED;FUJITSU VLSI LIMITED |
发明人 |
EMA, TAIJI;KATAYAMA, MASAYA |
分类号 |
H01L21/316;H01L21/265;H01L21/318;H01L21/32;H01L21/76;H01L21/762;H01L21/8242;H01L27/08;H01L27/10;H01L27/108;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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