CHAMEL POLYSILICON MANUFACTURING METHOD OF THIN-FILM TRANSISTOR

摘要

depositing an amorphous silicon film(2) on an oxide layer(1) at 510-550 deg.C under silane gas so as to enlarge grain size of polycrystal silicon film; and forming the polycrystal silicon film with the enlarged grain size by annealing the amorphous silicon film at 600-650deg.C under below 1/1000 Torr for 4-10 hrs.. The depositing process and the annealing process are continuously performed in a tube.