SENSE CIRCUIT FOR READ ONLY MEMORY

摘要

PURPOSE:To obtain a sense circuit reading out massive information in an ROW with a low power consumption and also at high speed. CONSTITUTION:A PMOS 13 and a PMOS 16 charge respectively a bit line 14 and a reference potential line 17 to the Level of a power source potential VCC based on a precharging signal PC/. After the completion of a charging period, PMOSs 13, 16 become off-states and the bit line 14 begins a discharge or a charge according to the data of a selected memory cell 1a. Simultaneously, the reference potential line 17 begins a discharge via an NMOS 18, however, the internal impedance 19b of a reference potential generating circuit 19 is adjusted so that the discharging time becomes longer than that of the bit line 14. Thus, significant data are outputted as an output signal S15A from the point of time when a minute potential difference is generated in the first and second input terminals of a sense amplifier 15A.