| 摘要 |
The high power ferroelectric RF phase shifter contains a ferroelectric material in a microstrip line section. Between the ferroelectric phase shifter and the input, there is a ferroelectric matching transformer. Between the ferroelectric phase shifter and the output, there is a quarter wave ferroelectric matching transformer. A bias field is connected across the top and bottom surfaces of the ferroelectric material. When a bias field is applied across the ferroelectric material, the permittivity is reduced and as such the velocity of propagation is increased. This causes an increase in the effective electrical length of the phase shifter. Increasing the bias voltage increases the phase shift. The ferroelectric RF phase shifter may be constructed of a ferroelectric liquid crystal (FLC). The ferroelectric material is operated above its Curie temperature.
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