发明名称 SPARE DECODER CIRCUIT OF MEMORY DEVICE
摘要 The spare decoder circuit for a memory device comprises a programmable fuse ROM array composed of a plurality of programmable fuse ROMs, each having a fuse connected to a power at one terminal, a field effect transistor having a source connected to the other terminal of the fuse and a drain connected to a ground and an inverter having an input terminal connected to a contact point of the fuse and field effect transistor and an output terminal connected to a gate of the field effect terminal; and a comparing circuit for comparing the output signal of the fuse ROM array with an address input signal and outputting one signal.
申请公布号 KR950010310(B1) 申请公布日期 1995.09.14
申请号 KR19920006495 申请日期 1992.04.17
申请人 LG SEMICONDUCTOR CO., LTD. 发明人 JON, YONG - WON
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址