发明名称 |
SPARE DECODER CIRCUIT OF MEMORY DEVICE |
摘要 |
The spare decoder circuit for a memory device comprises a programmable fuse ROM array composed of a plurality of programmable fuse ROMs, each having a fuse connected to a power at one terminal, a field effect transistor having a source connected to the other terminal of the fuse and a drain connected to a ground and an inverter having an input terminal connected to a contact point of the fuse and field effect transistor and an output terminal connected to a gate of the field effect terminal; and a comparing circuit for comparing the output signal of the fuse ROM array with an address input signal and outputting one signal.
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申请公布号 |
KR950010310(B1) |
申请公布日期 |
1995.09.14 |
申请号 |
KR19920006495 |
申请日期 |
1992.04.17 |
申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
JON, YONG - WON |
分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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