A method of fabricating a semiconductor device using high dose implantation.

摘要

A method of fabricating a semiconductor device, comprising the steps of: forming a mask layer (4) on a silicon substrate (1) so that an inclination angle of a surface of the mask layer with respect to a surface of the silicon substrate does not exceed 54.7 degrees; implanting dopants at a high dose in the silicon substrate (1) using the mask layer (4) so that the surface of the silicon substrate is transformed into an amorphous layer (6), the amorphous layer (6) having no inclination angle exceeding 54.7 degrees with respect to the surface of the silicon substrate; and annealing the silicon substrate having the amorphous layer so that the amorphous layer grows into a high-dose dopant diffusion layer (7). <IMAGE>