| 摘要 |
<p>PURPOSE:To realize a thin film semiconductor device high in yield, reliability, and durability, wherein adjacent patterns formed on the thin film semiconductor device can be set large enough in clearance between them. CONSTITUTION:The ends of an active layer 5 and a gate wiring 15 are warped through a heating process, whereby so-called three-dimensional patterns are formed so as to be large enough in pattern width and size to meet various electrical properties, and moreover the pattern can be more lessened in occupied area projected over the upside of a substrate 1. By this setup, the adjacent patterns of various patterns can be set large enough in space (clearance) between them. In result, the ends of various patterns can be kept free from a short circuit which occurs between them (or pattern failure such as pattern bridge).</p> |
