| 摘要 |
<p>PURPOSE: To provide a high power semiconductor module which is easily manufactured with satisfactory radiating efficiency and high reliability, and an insulating metal board used therefor. CONSTITUTION: A high power semiconductor module has an insulating metal board 51 for supporting semiconductor chips connected to each other in a sheath. Since a terminal block 90 is connected to the board 51 by a snap action type, it supports terminals 55, 56, 57, 63, etc., which are disposed on solder pads on the board 51. Soft silicon is charged in a space between the board 51 and the block 90 from a central opening of the block 90. The block 90 has bosses 91 to 93 extending upwards, and a bottom of an upper sheath assembly 50 is surrounded by an upper part of the block 90.</p> |
