| 摘要 |
<p>PURPOSE:To display an image of high quality and to produce the device at a low cost by using a material showing durability at specified temp. for the substrate and forming a crystalline semiconductor thin film having specified or higher carrier mobility as the active layer of a thin film transistor. CONSTITUTION:The substrate 11 substantially consists of such a material having temp. durability of <=600 deg.C. The active layer 131 of the thin film transistor 54 substantially consists of a crystalline semiconductor thin film having >=10cm<3>/ V.sec carrier mobility. Since the light-transmitting substrate 11 substantially consists of a material having temp. durability of <=600 deg.C, the device can be produced by using an inexpensive substrate. Further, the active layer 131 of the thin film transistor 54 substantially consists of a crystalline semiconductor thin film having high carrier mobility, a large on-current of the transistor 54 is obtd. Thereby, an image having high contract and less flicker noise can be displayed. Since a large on-current is obtd., the thin film transistor 54 can be made fine, and a precise image display is attained.</p> |
