| 摘要 |
The method includes depositing a first metallic film ( TiW or similar material), pref. by vaporisation, and then depositing a second metallic film ( AlCu or similar) also by vaporisation. A mask is then used to control the deposit of up to four different metallic elements and a barrier layer (630) placed on a layer of polysilicon (610A-610B). There are then three further layers. Connections are provided to bars (620 or 650), and to a global connection (640) of lower resistivity. The assembly is then etched through a series of different masks to achieve the required conductivity patterns.
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