METALIZING METHOD OF SEMICONDUCTOR DEVICE

摘要

(i) forming an insulating film on a semiconductor substrate, and forming a contact hole on a defined portion of the insulating film; (ii) forming a diffusion preventing film in contact with the semiconductor substrate through the contact hole on the insulating film; (iii) forming a first metal film on the diffusion preventing film, and burying the contact hole to move metal atoms by carrying out a first heat treatment under vacuum; (iv) forming a second metal film on the first metal film, and carrying out planarization of the surface of the second metal film to move metal atoms by carrying out a second heat treatment under vacuum. The obtained metal wiring layer is free from cavity in contact hole burying process.