Structure of contact between wiring layers in semiconductor integrated circuit device and method for forming the contact.

摘要

An insulation film is interposed between a first-level wiring layer (12-1) and a second-level wiring layer (16-1). A contact hole (14) is formed in the insulation film on the first-level wiring layer (12-1) to electrically connect the first-level wiring layer (12-1) and second-level wiring layer (16-1). The contact hole (14) is larger than the width of the first-level wiring layer (12-1) and second-level wiring layer (16-1). The second-level wiring layer (16-1) is formed on a side wall and a bottom portion of the contact hole (14) and electrically connected to the first-level wiring layer (12-1) at the bottom portion of the contact hole (14).