| 摘要 |
PURPOSE:To enhance the plotting accuracy while shortening the exposing time by employing a positive or negative electron beam resist selectively depending on the area of an integrated circuit and coating the surface of a chemical amplification system electron beam resist with a conductive polymer. CONSTITUTION:Positive and negative electron beam resists are employed selectively for the contact hole making process and the wiring forming process. When a contact hole is made, an insulating film 20 is deposited at first on the main plane of a semiconductor wafer 2 and a chemical amplification system positive electron beam resist 21 is applied thereon. A positive polymer 22 is further applied thereon and then the surface of the semiconductor wafer 2 is irradiated with an electron beam. Subsequently, the positive electron beam resist 21 is baked. The semiconductor wafer 2 is washed with water to remove the conductive polymer 22 on the surface and then the positive electron beam resist 21 is developed using an organic solvent. Thereafter, the insulating film 20 is etched to make a contact hole 23 and then the positive electron beam resist 21 is removed. |
