| 摘要 |
PURPOSE:To provide a compound semiconductor device which is capable of lessening wiring layers located on an element in number of layers, more enhanced in yield, and improved in degree of integration. CONSTITUTION:A two-dimensional electron gas layer 16 composed of a first compound semiconductor layer 13 and a second compound semiconductor layer 14 different from the first layer 13 in composition and formed on the first layer 13 is used as an inter-element wiring path 20 in a semiconductor device. |
