发明名称 Aluminim nitride thin film substrate and process for producing same.
摘要 An aluminum nitride film substrate comprising a single crystal diamond having, on its (111) plane, (1) a C-axis oriented aluminum nitride film or (2) an aluminum nitride single crystal film, the C-plane of the aluminum nitride single crystal being parallel to the (111) plane of said single crystal diamond; an aluminum nitride film substrate comprising a substrate having thereon a (111) direction oriented diamond polycrystalline film, and further having thereon a C-axis oriented aluminum nitride film; and a process for producing these aluminum nitride film substrate. <IMAGE>
申请公布号 EP0669412(A1) 申请公布日期 1995.08.30
申请号 EP19950102701 申请日期 1995.02.24
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 UTUMI, YOSHIHARU, C/O ITAMI WORKS;IMAI, TAKAHIRO, C/O ITAMI WORKS;FUJIMORI, NAOJI, C/O ITAMI WORKS
分类号 C30B23/02;C30B25/02 主分类号 C30B23/02
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