| 摘要 |
An attenuated phase-shifted reticle is disclosed. The reticle comprises a device region and a scribeline region. The scribeline region further comprises metrology cells, which contain features to be patterned for the purpose of measurement, etc. Other portions of the scribeline region comprise a sub-resolution pattern of, for example, lines and spaces 180 DEG out of phase. Since the pattern is sub-resolution, it will not print. Since the pattern comprises features 180 DEG out of phase, the intensity of radiation underneath the pattern is significantly reduced. Therefore, in a lithography method incorporating multiple exposures of the scribeline region, the metrology cells are not overexposed by the overlapping exposures in the stepping system.
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