发明名称 |
ELECTROMIGRATION RESISTANT METALLIZATION STRUCTURES FOR MICROCIRCUIT INTERCONNECTIONS WITH RF-REACTIVELY SPUTTERED TITANIUM TUNGSTEN AND GOLD |
摘要 |
Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of ICinterconnections with a metal-pitch as small as 1.5 .mu.m, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations. |
申请公布号 |
CA2160234(A1) |
申请公布日期 |
1995.08.24 |
申请号 |
CA19952160234 |
申请日期 |
1995.02.14 |
申请人 |
TELEFONAKTIEBOLAGET LM ERICSSON |
发明人 |
HONG, SAM-HYO |
分类号 |
H01L21/28;H01L21/285;H01L21/768;H01L23/48;H01L23/485;H01L23/52;H01L23/532;H01L29/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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