| 摘要 |
PURPOSE: To enable the formation of a pattern across a large difference in level by a method wherein a first foundation resist layer is formed on the low level region of a lower structure to level the surface of the lower structure. CONSTITUTION: A 1st foundation resist layer 13 is applied to the surface of a substrate 11 on which steps are formed by the formation of a device 12 and the substrate surface on which the differences in level are formed is primarily levelled. At this point, if the thickness of the 1st foundation resist layer 13 on a circumferential part III is equivalent to the step between a cell part II and the circumferential part III or larger than 70% of the difference in level, it is advantageous to the levelling. Then, if the 1st foundation resist layer 13 is exposed by utilizing, for instance, a cell threshold voltage adjusting ion implantation mask 14 as a mask for exposing the cell part II only and developed, all the resist layer on the cell part II is removed and the surface of the substrate can be levelled. After a development process is finished, a heat treatment is applied to maintain the hardness of the 1st foundation resist layer 13 and remaining developer is removed. |
