发明名称 |
Semiconductor contact via structure and method |
摘要 |
A method is provided for forming an integrated circuit contact structure. A conductive region is formed on a semiconductor device. Thereafter an insulating layer is formed over the conductive region. An opening is then formed through the insulating region to the conductive region. A thin barrier layer is deposited over the integrated circuit contact structure. A portion of the thin barrier layer is removed by backsputtering the integrated circuit contact structure so that only a thin barrier sidewall remains. Finally, a conductive metal layer is deposited over the integrated circuit contact structure. In one embodiment, the integrated circuit contact structure is baked before the conductive metal layer is deposited.
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申请公布号 |
US5444019(A) |
申请公布日期 |
1995.08.22 |
申请号 |
US19930157571 |
申请日期 |
1993.11.24 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
CHEN, FUSEN E.;DIXIT, GIRISH A.;WEI, CHE-CHIA |
分类号 |
H01L21/28;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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