| 摘要 |
PURPOSE:To form the lower electrode of a capacitor element using a ruthenium dioxide (RuO2) film by dryetching step. CONSTITUTION:After dryetching an SOG film 6 formed on a RuO2 film 5 using a photoresist film 7, the RuO2 film 5 is etched away by RIE using oxygen plasma using the SOG film 6 as a mask simultaneously removing the photoresist film 7 and then the SOG film is removed by RIE using a mixed gas of CF4 and CHF3. |
