| 摘要 |
<p>PURPOSE:To prevent the deviation of stress when a lead wire is brazed to a metallic barrier electrode by providing a circular connecting electrode layer having an excellent brazing property on a metallic Schottky barrier electrode layer. CONSTITUTION:After forming a P-type guard ring area 3 in the surface layer of an N-type layer 2 formed on an N<+>-type silicon substrate 1, an oxidized film 4 is formed on the surface of the layer 2 and an rectangular window is opened through the layer 4. Then a metallic barrier electrode layer 5 and Au film 7 are successively formed and the film 7 and an Ni film 6 are patterned in circular shapes, with the layer 5 below the Ni film 6 being patterned in a rectangular shape a little larger than the window of the oxidized film 4. After patterning the films 7 and 6 and layer 5, a lead wire 9 is soldered 8 to the surface of the Au film 7. Since the brazing part has a circular shape, the deviation of a stress applied to the semiconductor substrate 1 when the solder cools can be eliminated.</p> |
