SINGLE LAYER RESIST PATTERNING METHOD ENHANCED ETCHING SELECTIVE RATION

摘要

forming a polysilicon layer(2) on a silicon substrate(1); coating a single layer resist(3) over the polysilicon layer(2); exposing the defined portion of the single layer resist to ultraviolet rays; and forming a single layer resist pattern(3') by a development process; and forming a silicon diffusion region(5) by diffusing a silicon in the surface of the single layer resist pattern(3'); forming a thin silicon oxide film(6) on the silicon diffusion region(5) by O2 plasma etching process; and forming a polysilicon pattern(2') by etching the exposed portion of the polysilicon layer(2) using the single layer resist pattern(3') as a mask. Formation of polysicon and oxide film with high etching selection rate on the resist pattern, makes an excess etching process without the resist thickness.