发明名称 Leitende Elektrodenschichten für ferroelektrische Kondensatoren in integrierten Schaltungen und Methode.
摘要 A ferroelectric capacitor for an integrated circuit includes a stack formed by a layer (10a) of a noble metal, a layer (20a) of a conducting oxide, a layer (30) of a ferroelectric material, another layer (20b) of a conducting oxide and another layer (10b) of a noble metal. The capacitor can also have another layer (20c) of conducting oxide located over the top layer of noble metal and below (20d) the first layer of the noble metal. A method of forming the same through establishing one layer over the other and annealing each layer is also disclosed. <IMAGE>
申请公布号 DE69203395(D1) 申请公布日期 1995.08.17
申请号 DE1992603395 申请日期 1992.05.26
申请人 RAMTRON INTERNATIONAL CORP., COLORADO SPRINGS, COL., US 发明人 KAMMERDINER, LEE, AVONDALE, COLORADO 81022, US;HUFFMAN, MARIA, COLORADO SPRINGS, COLORADO 80917, US;GOLABI-KHOOZANI, MANOOCHEHR, COLORADO SPRINGS, COLORADO 80917, US
分类号 H01G4/33;H01G4/008;H01L21/02;H01L21/822;H01L27/04;(IPC1-7):H01G7/06;H01G4/06 主分类号 H01G4/33
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