发明名称 |
Semiconductor memory device. |
摘要 |
<p>The life of a semiconductor memory device can be prolonged by using a plurality of memory cells and decreasing the stress applied to the dielectric film of the memory cells storing a data value "1." This is achieved in the present invention by decreasing the number of rewritings required to retain stored data. Specifically, the present invention utilizes a reverse and rewrite means to reverse and rewrite data back into memory cells after being read, memory means for memorizing a signal indicating whether the currently stored data is in a reversed state, and judging means for judging whether the data should be reversely output.</p> |
申请公布号 |
EP0667621(A2) |
申请公布日期 |
1995.08.16 |
申请号 |
EP19940117508 |
申请日期 |
1994.11.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKANE, GEORGE;MUKUNOKI, TOSHIO;MORIWAKI, NOBUYUKI;SUMI, TATSUMI;HIRANO, HIROSHIGE;NAKAKUMA, TETSUJI |
分类号 |
G11C14/00;G11C7/10;G11C11/22;(IPC1-7):G11C7/00 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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