| 发明名称 |
Method of forming Si-O containing coatings |
| 摘要 |
Disclosed is a method for forming improved Si-0 containing coatings on electronic substrate. The method comprises treating Si-0 containing ceramic coatings derived from hydrogen silsesquioxane resin with hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.
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| 申请公布号 |
US5441765(A) |
申请公布日期 |
1995.08.15 |
| 申请号 |
US19930124529 |
申请日期 |
1993.09.22 |
| 申请人 |
DOW CORNING CORPORATION |
发明人 |
BALLANCE, DAVID S.;CAMILLETTI, ROBERT C.;DUNN, DIANA K. |
| 分类号 |
C01B33/113;C01B33/00;C04B35/04;H01L21/3105;H01L21/316;(IPC1-7):B05D3/02 |
主分类号 |
C01B33/113 |
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