| 摘要 |
PURPOSE:To provide a semiconductor device of high speed and large capacity wherein heat dissipation is excellent and a problem concerning exfoliation of resin and generation of cracks at the time of reflow processing or the like is resolved, and a heat spreader used for the semiconductor device. CONSTITUTION:In a plastic molded type semiconductor device having a lead terminal, a heat spreader 2 is constituted of composite composed of Fe based metal 3 and Cu based metal 4, and the Cu based metal 4 is buried so as to penetrate vertically the heat spreader 2. In the heat spreader 2, a plurality of Fe based metals 3 and a plurality of Cu based metals 4 are mixed and buried. It is desirable that the Cu based metal 4 penetrates vertically the heat spreader and forms a core having an Si spray film. An exposed radiation fin is preferably mounted on the opposite side of a semiconductor chip 1. |
