| 摘要 |
PURPOSE:To form a wiring structure having excellent electromigration resistance, low reflectance on wiring material used for lithography and excellent mass productivity. CONSTITUTION:Within the semiconductor device, the metallic wiring is lamination-structured of an A layer 4 mainly comprising Al, a B layer 6 mainly comprising a compound of Al and Ti formed on the A layer 4 and a D layer 10 mainly comprising Ti and N on the B layer 6 in the stomic number ratio of Ti/N with Ti exceeding N. |
