| 摘要 |
PURPOSE:To increase the level of integration of an SRAM by forming an insulating film above the gate electrode of an MISFET for driving, and forming a second conductivity type polycrystalline silicon film which is electrically connected with the drain region of the MISFET for driving and used as the gate electrode of an MISFET for load, above the insulating film. CONSTITUTION:An gate insulating film 5 is formed on the main surface of a P-type well region. An N<+> type semiconductor region 11 which is used as an N<+> type semiconductor region 8, a source region and a drain region is formed on the main surface part of a well region with which a gate electrode 7 is connected through an N-type semiconductor region 9 used as a part of a source region and a part of a drain region and a connection hole 6. A layer insulating film 12 is formed on the whole part of the substrate containing the upper part of the gate electrode 7, and a gate insulating film 15 is formed on the whole surface of the substrate, so as to cover a gate electrode 14. The channel forming regions 17A, the drain regions 17B, and the source regions 17C of MISFET's Qp1, Qp2 for loads are formed in order above the gate insulating film 15. |
