发明名称 STRIPPING, PASSIVATION AND CORROSION INHIBITION OF SEMICONDUCTOR SUBSTRATES
摘要 <p>A multicycle process for passivating, and optionally stripping, a substrate (20) having etchant byproducts (24) and remnant resist (26) thereon, is described. In the multicycle passivation process, the substrate is placed into a vacuum chamber (52), passivating gas is introduced into the vacuum chamber (52), and a plasma is generated from the passivating gas. Thereafter, the flow of passivating gas is stopped and the plasma in the chamber is extinguished. The passivating cycle is repeated at least twice to passivate the substrate. In the multicycle passivating and stripping process, each passivating cycle is alternated by a stripping cycle for stripping remnant resist (26) from the substrate.</p>
申请公布号 WO1995021458(A1) 申请公布日期 1995.08.10
申请号 US1995001100 申请日期 1995.01.27
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