| 摘要 |
<p>Forming a dielectric layer (16) on a high temp metal layer (14) which has good high temp adhesion comprises forming the high temp metal layer on a substrate (11), the metal having a favourable free energy of oxide formation, depositing, exposing, and developing a photoresist to form a pattern, and etching the pattern in the metal. Remaining photoresist is removed, using a non-oxidising stripper, the adhering dielectric layer formed, and then annealed in inert gas to stabilise for further high temp processing. Also claimed is a method as above in which the metal is Ti, TiN, V, V-N, Cr, Cr-N, Ta, or Ta-N, and the dielectric is not annealed. Further claimed is a method as above where the metal is TiN and the dielectric is annealed in an ambient having less than 3000 pm O2.</p> |
