| 摘要 |
A static random access memory (20) with programmable preset data includes two bit line pairs for each column of memory cells (31-36). In response to a control signal during a programming cycle, preset programming logic (28) charges one of the bit line pairs of each column of memory cells to a predetermined logic state and the other bit line pair to a logical complement of the predetermined logic state. Memory cells (31-36) of each column of memory cells are coupled to either one of the two bit line pairs by mask programming. During the programming cycle, each of the memory cells (31-36) store programmed data depending upon which bit line pair each memory cell is coupled to. The memory (20) provides the advantages of a static random access memory and the nonvolatility of a read only memory.
|
