发明名称 |
GAAS SINGLE CRYSTAL MANUFACTURING METHOD |
摘要 |
controlling an As pressure in an ampule by controlling a stoichiometry of the presynthesized polycrystal As, adding doping elements of Si or Zn to the ampule in time of polycrystal synthesis; controlling the As pressure to synthesize the polycrystal on the condition that the doped polycrystal synthesis is different from the undoped polycrystal synthesis in melt stoichiometry.
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申请公布号 |
KR950008847(B1) |
申请公布日期 |
1995.08.08 |
申请号 |
KR19920002116 |
申请日期 |
1992.02.13 |
申请人 |
LG CABLE LTD. |
发明人 |
KO, HAN - JUN;SHIN, KI - CHOL;NO, YONG - JONG |
分类号 |
H01L21/225;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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