发明名称 GAAS SINGLE CRYSTAL MANUFACTURING METHOD
摘要 controlling an As pressure in an ampule by controlling a stoichiometry of the presynthesized polycrystal As, adding doping elements of Si or Zn to the ampule in time of polycrystal synthesis; controlling the As pressure to synthesize the polycrystal on the condition that the doped polycrystal synthesis is different from the undoped polycrystal synthesis in melt stoichiometry.
申请公布号 KR950008847(B1) 申请公布日期 1995.08.08
申请号 KR19920002116 申请日期 1992.02.13
申请人 LG CABLE LTD. 发明人 KO, HAN - JUN;SHIN, KI - CHOL;NO, YONG - JONG
分类号 H01L21/225;(IPC1-7):H01L21/225 主分类号 H01L21/225
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