发明名称 |
Thin-film transistor with suppressed off-current and Vth +B |
摘要 |
A thin-film transistor (3, 5a, 5b and 5c) is covered with a first silicon nitride film (9) formed by an LPCVD method. A first silicon oxide film (6) is formed on the first silicon nitride film (9). A second silicon nitride film (7), i.e., passivation film which is formed by a plasma CVD method is provided on the first silicon oxide film (6). In addition, the thin-film transistor includes a semiconductor layer covering a gate electrode. The semiconductor layer includes source, drain and active regions. The active region preferably includes a smaller amount of fluorine than the gate electrode.
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申请公布号 |
US5440168(A) |
申请公布日期 |
1995.08.08 |
申请号 |
US19940198058 |
申请日期 |
1994.02.18 |
申请人 |
RYODEN SEMICONDUCTOR SYSTEM ENGINEERING CORPORATION;MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NISHIMURA, HISAYUKI;MAEGAWA, SHIGETO;MAEDA, SHIGENOBU |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L27/00;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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