| 摘要 |
PURPOSE:To provide a method for manufacturing a semiconductor laser which improves the optical characteristics and the reliability of the semiconductor laser and further facilities the manufacture of the semiconductor laser. CONSTITUTION:A clad layer 2, an optical guide layer 3, a light emitting layer 4, an optical guide layer 5, a clad layer 6, an ultra-lattice layer 7, and a contact layer 8 are formed on a substrate 1 successively by the molecular beam growth method and an electrode 9 in a stripe shape which is 10mum wide is formed on the surface of the contact layer 8. Then. the surface of the contact layer 8 is subjected to plasma treatment with Ar 985 (pressure=3X10<-2> Torr, power=100 W, time=3 minutes). Then, a mounting electrode 11 is formed on each surface of the contact layer 8 and the stripe P electrode 9 and an electrode 12 is formed on the lower surface of the substrate 1. |
