METHOD FOR USING MATERIAL OF LOW DIELECTRIC CONSTANT IN MANUFACTURE OF INTEGRATED CIRCUIT

摘要

PURPOSE: To cure a final structure and to minimize crosstalks by coating an integrated circuit with a low specific-dielectric-constant material and heating it in an atmosphere. CONSTITUTION: This low specific-dielectric-constant material 34 is applied over the top surface of an integrated circuit device 10 to form a passivation oxide film 30 on the surface. Then the structure is cured through a heat treatment. After the curing, a photomasking and etching step is carried out. This is performed for opening areas in an SOG layer 34 and the passivation oxide film layer 30 for making a connection from a package to the integrated circuit device 10. Then resist emulsion is removed. Lastly, the integrated circuit device 10 is annealed to remove damages and defects present in a gate oxide film. Consequently, crosstalks can be minimized.