| 摘要 |
<p>PURPOSE: To eliminate the risk of damaging the surface of a semiconductor, even when a contact pressure required for superior electrical contact to a power MOS device is applied. CONSTITUTION: A semiconductor device chip 22 is provided with a dummy cell 11, and the thickness of an oxide layer 7 in dummy cell 11 is made thicker than that of the oxide layer 7 in the residual part of the semiconductor device chip 22, and a polysilicon layer 8 and a metal layer 10 are protruded higher than the residual part of the semiconductor device chip 2, and the pressure applied with a washer 16 is made to be applied to the entire surface of the dummy cell 11.</p> |
