| 摘要 |
PURPOSE:To form a resist pattern having a vertical sectional shape by a method wherein a sensing film is formed in the absorbance within a specific range when a reaction intermediate exists on a substrate to be exposed and developed later. CONSTITUTION:A negative resist wherein the absorbance within the range of 0.1-1.5 when a reaction intermediate exists is prepared. Next, this resist is spin-coated on a silicon wafer 7 and then dried up on a hot plate at 110 deg.C for 90sec. so as to form a resist film 8 1mum thick. Next, this resist film 8 is exposed to an ultraviolet ray in 248nm from a krypton fluoride excimer laser 10 through a photomask 9 to be patterned later. |
