Vorrichtung und Verfahren zur Beschreibung von fotolithografischen Systemen.

摘要

An apparatus and method for characterizing lithography imaging to quickly optimize a lithography process is described. The apparatus consists of two lithography masks for use with an optical stepper, ion-beam or x-ray lithography tool. The first mask is used for creating topography on the wafer substrate (41), and is patterned with groups of large elements (13, 15, 17) arranged in orthogonal and angular directions. The second mask is used for defining a periodic pattern over the large elements. Preferably, the periodic pattern (21, 23, 25) is in the same order of dimension as the critical element on the integated circuit. A method is provided for characterizing lithography tools which do not have lithography masks such as an electron beam exposure tool.