| 摘要 |
PURPOSE:To provide a method for producing silicon laminate by plasma fusion method, capable of improving semiconductor characteristics. CONSTITUTION:Silicon particles are introduced into a high-temperature Plasma to be melted and the molten material is fed onto a heated carbon fiber woven fabric 21 to form a polycrystal silicon film 23 and then, this polycrystal silicon film is quenched to 900-1000 deg.C. Thereby, lattice defects including twin in the film is produced and, simultaneously, this polycrystal silicon film is kept at 900 deg.C to 1000 deg.C to decrease lattice defect (line defect or point defect) other than twin produced in a polycrystal silicon film. Then, though the ratio of the twin existing as a face defect becomes high in the polycrystal silicon film, this twin has almost no possibility for effecting bad influence upon semiconductor characteristics of the polycrystal silicon film, because the twin is electrically inert defect, compared with the line detect or the point defect and consequently, semiconductor characteristics are improved. |
