| 摘要 |
PURPOSE:To obtain a semiconductor light-emitting element suitable for a low threshold current and a high-output operation by a method wherein a first clad layer is formed as a layer having one pair or more of superlattice structures on the part, which is adjacent to an active layer, of the first clad layer and the relation between the mean refractive indexes of the first clad layer, the active layer and a second clad layer is specified. CONSTITUTION:An N-type GaAs buffer layer 108, an N-type AlGaAs clad layer 104, an undoped AlGaAs/GaAs superlattice light guide layer 102, an undoped InGaAs active layer 101, an undoped AlGaAs/GaAs superlattice light guide layer 103 and a P-type AlGaAs clad layer 105 are continuously formed on an N-type GaAs semiconductor substrate 109 by a molecular beam epitaxial method. Here, the mean refractive index of the layer 101 is kept made larger than either of that of the layer 104 and that of the layer 105. |
