METHOD OF FORMING PATTERN

摘要

forming a photoresist layer on a substrate having a step; exposing using a first mask; exposing hte thicker step portion using a second mask; and developing. The second mask pattern has a dimension adjusted according to the thickness of the photoresist and depth of the step; it has a size 0.5-400 micron along the step portion. The exposure energy of the second step is 5-20% of that of the first step. The method enhances an pattern profile at the step portion, and simplifies the manufacturing process