| 摘要 |
The method includes the steps of forming a P + layer (9) on a P - silicon wafer (8), sequentially forming an oxide film (10), a nitride film (11), an oxide film (12), a thermocouple material layer (17) and an insulating film (14) thereon, applying an Au film on the insulating film (14) to form a metal pattern for a black body, and chemically etching the pattern to form a diaphragm to form a black body (18) by a electroplating method, thereby preventing the damage of black body film to obtain a black body film having high absorption factor.
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