| 摘要 |
This method is to reduce the area of contact device by minimizing the space between the contacts formed in the first conducting lines and the second conducting lines when connecting the bottom part of the first conducting lines with the top part of the third conducting lines and insulating the middle part of the second conducting lines. The method comprises of the steps of: forming an element separation insulating layer (2), a gate electrode (4), source and drain electrodes (6), an insulating layer (5) on the upper part of the gate electrode, an insulating spacer (7) on the side wall of the gate electrode, and a thin insulating layer (8) sequentially; forming a photoresist layer (19) on the source and drain electrodes; making the top of the photoresist layer exposed by forming an insulating layer (12) and etching it back sequentially; etching the thin insulating layer (8) after eliminating the photoresist layer, forming a contact hole on the source and drain electrodes, forming a conducting material (10), forming a mask (11), etching the conducting material with the mask, and forming conducting lines (10') sequentially.
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