| 摘要 |
PURPOSE:To obtain a ferroelectric thin film capable of making effective use of the characteristics of a ferroelectric material made of a perovskite type multiple oxide and capable of forming a structure with an oriented grown thin film of the material held between metallic electrodes. CONSTITUTION:An amorphous SiO2 layer 2 having 600nm thickness is disposed on the principal face of a silicon substrate 1 with the (100) face as the principal face and a tantalum film 3 having 50nm thickness and a (111) face oriented film 4 of platinum having 50nm thickness are successively formed on the layer 2. A precursor soln. prepd. by partially hydrolyzing a soln. contg. lead acetate, Zr propoxide and Ti propoxide in methoxyethanol by a sol-gel method is applied plural times on the platinum film 4 and annealed to form the objective dielectric thin film 5 having 400nm thickness, that is, a (111) face oriented film of a perovskite type multiple oxide. |
