发明名称 |
Sputtering target and method for producing same |
摘要 |
A sputtering target having a relative density of 90% or more and a single-phase structure for forming a indium-tin oxide layer of low resistance is produced by pressing a composite powder of indium oxide and tin oxide having an average diameter of 0.1 mu m or less and a tin content controlled to 1.5-6 weight %; and sintering the pressed composite powder at 1500 DEG -1700 DEG C. in an oxygen atmosphere pressurized at 1-10 atm.
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申请公布号 |
US5435826(A) |
申请公布日期 |
1995.07.25 |
申请号 |
US19930155813 |
申请日期 |
1993.11.23 |
申请人 |
HITACHI METALS, LTD. |
发明人 |
SAKAKIBARA, MASAHIKO;KIKUCHI, HIROMI |
分类号 |
C04B35/01;C23C14/08;C23C14/34;(IPC1-7):C22C29/12 |
主分类号 |
C04B35/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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