发明名称 Sputtering target and method for producing same
摘要 A sputtering target having a relative density of 90% or more and a single-phase structure for forming a indium-tin oxide layer of low resistance is produced by pressing a composite powder of indium oxide and tin oxide having an average diameter of 0.1 mu m or less and a tin content controlled to 1.5-6 weight %; and sintering the pressed composite powder at 1500 DEG -1700 DEG C. in an oxygen atmosphere pressurized at 1-10 atm.
申请公布号 US5435826(A) 申请公布日期 1995.07.25
申请号 US19930155813 申请日期 1993.11.23
申请人 HITACHI METALS, LTD. 发明人 SAKAKIBARA, MASAHIKO;KIKUCHI, HIROMI
分类号 C04B35/01;C23C14/08;C23C14/34;(IPC1-7):C22C29/12 主分类号 C04B35/01
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