| 摘要 |
PURPOSE:To efficiently and economically obtain the high-purity silicon carbide powder and further its single crystal by continuously supplying a raw material contg. silicon and carbon to the center of the multiarc generated in a furnace and thermally decomposing the raw material to synthesize silicon carbide. CONSTITUTION:Since a multiarc M forms a stable flame from the center toward the outside, a raw material supplied to the center is heated to a high temp. by the multiarc M without being ejected. Consequently, SiO2 is reduced by carbon to form atomic Si. The atomic Si is combined with atomic C to form SiC. The fine powder of the formed silicon carbide descends successively and is cooled while passing through a cooler 6 connected to the lower part of a reaction furnace 1 and discharged to the outside by a discharger 7. The mixed powder of SiO2 and C or the mixed powder of SiO2, C, Si, etc., are used as the raw material. H2 is used as a carrier gas, and an inert gas such as Ar may also be used. |
