Method of manufacturing X-ray exposure mask

摘要

The present invention can precisely manufacture an X-ray mask pattern at intervals of less than 10 nm by using a thin film crystalline growth method, applying a laminated layer body of a fine structure having a precision of less than 1 atomic layer onto a substrate, and utilizing the difference in X-ray absorption coefficients. A method of manufacturing an X-ray exposure mask comprises the steps of alternately laminating two kinds of material consisting of a combination of a semiconductor, metal and insulator having substantially equal lattice constants and largely different coefficients of X-ray absorption on a substrate of a crystal body to thicknesses of less than 10 ANGSTROM by an epitaxial crystal growth method, and manufacturing a mask for exposing streak-like X-rays on a desired resist as a result of the largely different coefficients of X-ray absorption between each layer.