| 摘要 |
PURPOSE:To read out the data with less error for the fluctuation in a temperature and a source voltage by constituting so as to incorporate a dummy cell simultaneously precharged when a memory cell is precharged and in which a voltage generating at a reading time becomes always the voltage corresponding to a value of (1). CONSTITUTION:The memory cell to be accessed is selected by an X decoder 130 and a Y decoder 120 after a precharge signal PC is added. When the accessed memory cell is the memory cell 112a in which (1) is written, the memory cell is in an off state, and no drain potential of an FET 140 is changed. On the other hand, the dummy memory cell 200 is turned OFF always, and the voltage is outputted from an amplifier 220, and is divided by a voltage divider 222, and a reference voltage Vref is generated. Thus, at the time of reading out the data by comparing the drain potential of the FET 140 with the reference voltage Vref, the fluctuation in the drain potential of the FETs 140, 214 are canceled. |
