| 摘要 |
PURPOSE:To enable a photovoltaic layer to be subjected to a sufficient hydrogen passivation treatment so as to obtain a thin-type polycrystalline Si solar cell high in energy conversion efficiency. CONSTITUTION:A thin-type polycrystalline Si solar cell whose semiconductor layer is as thick as 150mum or below is manufactured through such a manner that a P-N junction (1, 2), an antireflection film 4, and a surface electrode 5 are successively formed on an Si support substrate 8, a prescribed part is removed from the rear of the Si support substrate 8 through etching to make a part of an active layer exposed, the rear side of the substrate 8 is subjected to a hydrogen passivation treatment by injecting hydrogen at a low acceleration of 0.5 to 5KeV, and an electrode 6 is provided to the rear of the substrate 8. |
