The invention relates to a method for producing heteroepitaxial diamond layers on Si-substrates by means of CVD and standard process gases, in which(a) during the nucleation phase a negative bias voltage is applied to the Si-substrate and(b) following the nucleation phase diamond deposition takes place.
申请公布号
EP0663023(A1)
申请公布日期
1995.07.19
申请号
EP19930921790
申请日期
1993.10.01
申请人
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;DAIMLER-BENZ AKTIENGESELLSCHAFT
